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MMDFS6N303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1200
C iss
V DS = 0
V GS = 0
T J = 25 ° C
12
10
Q T
30
1000
800
C rss
8.0
Q1
Q2
V GS
20
600
6.0
400
C iss
4.0
I D = 5.0 A
10
200
0
C oss
C rss
2.0
0
Q3
V DS
T J = 25 ° C
0
?10
? 5.0
0
5.0
10
15
20
25
30
0
4.0
8.0
12
16
V GS
V DS
Q G , TOTAL GATE CHARGE (nC)
1000
GATE?TO?SOURCE OR DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
5.0
Figure 8. Gate ? To ? Source and
Drain ? To ? Source Voltage versus Total Charge
V GS = 0 V
100
t d(off)
t f
t r
4.0
3.0
2.0
T J = 25 ° C
10
t d(on)
1.0
1.0
0
1.0
10
100
0.5
0.6
0.7
0.8
0.9
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
V SD , SOURCE?TO?DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
100
Mounted on 2 ″ sq. FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided)
350
10
with one die operating,
10 s max.
10 ms
1.0 ms
300
250
I D = 6.0 A
200
1.0
V GS = 12 V
SINGLE PULSE
dc
150
T C = 25 ° C
0.1
0.01
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100
50
0
0.1
1.0
10
100
25
50
75
100
125
150
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
5
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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